www.belling.com.cn v2.0 page1 blm 3400 pb free product n-channel enhancement mode power mosfet description the BLM3400 uses advanced trench technology to provi de excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application . general features v ds = 30v,i d = 5.8a r ds(on) < 59m @ v gs =2.5v r ds(on) < 45m @ v gs =4.5v r ds(on) < 41m @ v gs =10v high power and current handing capability lead free product is acquired surface mount package application pwm applications load switch power management d g s schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity 3400 BLM3400 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (ta=25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 12 v drain current-continuous i d 5.8 a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.4 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 1.0 /w electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 30 33 - v
www.belling.com.cn v2.0 page2 blm 3400 pb free product zero gate voltage drain current i dss v ds =30v,v gs =0v - - 1 a gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.7 0.9 1.4 v v gs =2.5v, i d =4a - 45 59 m v gs =4.5v, i d =2.9a - 34 45 m drain-source on-state resistance r ds(on) v gs =10v, i d =2.9a - 31 41 m forward transconductance g fs v ds =5v,i d =2.9a 10 - - s dynamic characteristics (note4) input capacitance c lss - 623 - pf output capacitance c oss - 99 - pf reverse transfer capacitance c rss v ds =15v,v gs =0v, f=1.0mhz - 77 - pf switching characteristics (note 4) turn-on delay time t d(on) - 3.3 - ns turn-on rise time t r - 4.8 - ns turn-off delay time t d(off) - 26 - ns turn-off fall time t f v dd =15v,i d =2.9a v gs =10v,r gen =3 - 4 - ns total gate charge q g - 9.5 - nc gate-source charge q gs - 1.5 - nc gate-drain charge q gd v ds =15v,i d =5.8a, v gs =4.5v - 3 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =2.9a - 0.75 1.2 v diode forward current (note 2) i s - - 2.9 a notes: 1. repetitive rating: pulse width limited by maximum j unction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production
www.belling.com.cn v2.0 page3 blm 3400 pb free product typical electrical and thermal characteristics
www.belling.com.cn v2.0 page4 blm 3400 pb free product sot-23 package information dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise speci fied 3. package body sizes exclude mold flash and gate b urrs. mold flash at the non-lead sides should be le ss than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted i nch dimensions are not necessarily exact.
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